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TrenchStop Series
IKW50N60T q
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
* * * * * Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time - 5s Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 50A VCE(sat),Tj=25C 1.5V Tj,max 175C Marking Code K50T60 Package TO-247
C
G
E
P-TO-247-3-1 (TO-220AC)
* * * * *
Type IKW50N60T
Ordering Code Q67040S4718
Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE 600V, Tj 175C) Diode forward current, limited by Tjmax TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time
2)
Symbol VCE IC
Value 600 801) 50
Unit V A
ICpuls IF
150 150 100 50
IFpuls VGE tSC Ptot Tj Tstg -
150 20 5 333 -40...+175 -55...+175 260 V s W C
VGE = 15V, VCC 400V, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s
1) 2)
Value limited by bond wire Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.1 Dec-04
Power Semiconductors
TrenchStop Series
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V, I C = 0. 2mA VCE(sat) V G E = 15V, I C = 50A T j = 25 C T j = 17 5 C Diode forward voltage VF V G E = 0V, I F = 5 0 A T j = 25 C T j = 17 5 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 0. 8mA, V C E = V G E V C E = 600V , V G E = 0V T j = 25 C T j = 17 5 C Gate-emitter leakage current Transconductance Integrated gate resistor Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current1) IC(SC) V G E = 1 5V,t S C 5s V C C = 400V, T j 150 C Ciss Coss Crss QGate LE V C E = 25V, V G E = 0V, f= 1 M Hz V C C = 4 80V, I C = 50A V G E = 1 5V T O -247-3- 1 IGES gfs RGint V C E = 0V ,V G E = 2 0V V C E = 20V, I C = 50A 4.1 600 Symbol Conditions RthJA TO-247 AC RthJCD TO-247 AC RthJC TO-247 AC Symbol Conditions
IKW50N60T q
Max. Value 0.45 0.8 40 Unit K/W
Value min. Typ. 1.5 1.9 1.65 1.6 4.9 max. 2 2.05 5.7
Unit
V
A 31 40 1000 100 nA S
3140 200 93 310 7 458.3
-
pF
nC nH A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.1 Dec-04
Power Semiconductors
TrenchStop Series
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm di r r / d t T j = 25 C, V R = 4 00V, I F = 5 0A , di F / dt = 12 80 A / s td(on) tr td(off) tf Eon Eoff Ets T j = 25 C, V C C = 4 00V, I C = 50A, V G E = 0/ 1 5V , RG= 7 , L 1 ) = 103nH, C 1 ) =39pF Energy losses include "tail" and diode reverse recovery. Symbol Conditions
IKW50N60T q
Value min. Typ. 26 29 299 29 1.2 1.4 2.6 143 1.8 27.7 671 max. ns C A A/s mJ Unit
ns
Switching Characteristic, Inductive Load, at Tj=175 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm di r r / d t T j = 17 5 C V R = 4 00V, I F = 5 0A , di F / dt = 12 80 A / s 205 4.3 40.7 449 ns C A A/s td(on) tr td(off) tf Eon Eoff Ets T j = 17 5 C, V C C = 4 00V, I C = 50A, V G E = 0/ 1 5V , RG= 7 L 1 ) = 103nH, C 1 ) =39pF Energy losses include "tail" and diode reverse recovery. 27 33 341 55 1.8 1.8 3.6 mJ ns Symbol Conditions Value min. Typ. max. Unit
1)
Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 2.1 Dec-04
Power Semiconductors
TrenchStop Series
IKW50N60T q
t p=2s
140A 120A
100A
IC, COLLECTOR CURRENT
100A 80A
T C =80C T C =110C
IC, COLLECTOR CURRENT
10s
10A
50s
60A 40A 20A 0A 100H z
Ic
1ms 1A DC 10ms
Ic
1kH z 10kH z 100kH z
1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 7)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=15V)
300W
80A
IC, COLLECTOR CURRENT
POWER DISSIPATION
250W 200W 150W 100W 50W 0W 25C
60A
40A
Ptot,
20A
50C
75C
100C 125C 150C
0A 25C
75C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 175C)
Power Semiconductors
4
Rev. 2.1 Dec-04
TrenchStop Series
IKW50N60T q
120A 100A 80A 60A 40A 20A 0A 0V 1V 2V 3V V GE =20V 15V 13V 11V 9V 7V
120A 100A 80A 60A 40A 20A 0A 0V 1V 2V 3V 4V V GE =20V 15V 13V 11V 9V 7V
IC, COLLECTOR CURRENT
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
IC, COLLECTOR CURRENT
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C)
2.5V
80A
IC =100A
IC, COLLECTOR CURRENT
2.0V IC =50A
60A
1.5V
40A
1.0V
IC =25A
20A
T J = 1 7 5 C 2 5 C
0.5V
0A
0.0V
0V
2V
4V
6V
8V
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=10V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Rev. 2.1 Dec-04
TrenchStop Series
IKW50N60T q
t d(off)
t d(off)
t, SWITCHING TIMES
100ns tf
tr
t, SWITCHING TIMES
100ns
tf
t d(on)
tr
10ns
10ns
t d(on)
0A
20A
40A
60A
80A
0
5
10
15
20
25
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, RG = 7, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175C, VCE= 400V, VGE = 0/15V, IC = 50A, Dynamic test circuit in Figure E)
7V
t d(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
6V m ax. 5V 4V 3V 2V 1V 0V -50C m in. typ.
t, SWITCHING TIMES
100ns tf tr
t d(on)
10ns 25C
50C
75C
100C 125C 150C
0C
50C
100C
150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 50A, RG=7, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.8mA)
Power Semiconductors
6
Rev. 2.1 Dec-04
TrenchStop Series
*) Eon and Ets include losses due to diode recovery 8.0mJ
IKW50N60T q
Ets*
*) E on a nd E ts include losses 6.0m J d ue to diode re co ve ry E ts *
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
5.0m J 4.0m J 3.0m J 2.0m J 1.0m J 0.0m J E off
6.0mJ Eon*
4.0mJ Eoff 2.0mJ
E on *
0.0mJ 0A 20A 40A 60A 80A
0
10
20
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, RG = 7, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, IC = 50A, Dynamic test circuit in Figure E)
*) Eon and Ets include losses due to diode recovery
*) E on and E ts include losses due to diode recovery
Ets*
E, SWITCHING ENERGY LOSSES
3.0mJ
E, SWITCHING ENERGY LOSSES
4m J
3m J E ts * 2m J
E on *
2.0mJ Eoff
E off 1m J
1.0mJ
Eon*
0.0mJ 25C
50C
75C
100C 125C 150C
0m J 300V
350V
400V
450V
500V
550V
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 50A, RG = 7, Dynamic test circuit in Figure E)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175C, VGE = 0/15V, IC = 50A, RG = 7, Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2.1 Dec-04
TrenchStop Series
IKW50N60T q
C iss
VGE, GATE-EMITTER VOLTAGE
1 5V 12 0V 1 0V 4 80 V
1nF
c, CAPACITANCE
C oss 100pF C rss
5V
0V 0nC
1 00n C
2 00n C
3 00 nC
0V
10V
20V
30V
40V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=50 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
12s
IC(sc), short circuit COLLECTOR CURRENT
800A
SHORT CIRCUIT WITHSTAND TIME
700A 600A 500A 400A 300A 200A 100A 0A 12V 14V 16V 18V
10s 8s 6s 4s 2s 0s 10V
tSC,
11V
12V
13V
14V
VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE 400V, Tj 150C)
VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C, TJmax<150C)
Power Semiconductors
8
Rev. 2.1 Dec-04
TrenchStop Series
10 K/W D=0.5 D=0.5
IKW50N60T q
ZthJC, TRANSIENT THERMAL RESISTANCE
10 K/W
-1
0.2 0.1 0.05
R,(K/W) 0.18355 0.12996 0.09205 0.03736 0.00703 7.425*10 -3 8.34*10 -4 7.235*10 -4 1.035*10 -5 4.45*10
R2
ZthJC, TRANSIENT THERMAL RESISTANCE
0.2 10 K/W
-1
, (s)
0.1
R,(K/W) 0.2441 0.2007 0.1673 0.1879
R1
-2
0.05 0.02 0.01
, (s) -2 7.037*10 -3 7.312*10 -4 6.431*10 -5 4.79*10
R2
6
10 K/W
-2
0.02 0.01
R1
C1= 1/R1
C2=2/R2
10 K/W single pulse
-2
C1= 1/R1
C2= 2/R2
single pulse 1s 10s 100s 1ms 10ms 100ms 1s
10s 100s
1ms
10ms 100ms
tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T)
tP, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T)
300ns
4.0C
trr, REVERSE RECOVERY TIME
250ns 200ns 150ns TJ=25C 100ns 50ns 0ns 700A/s
Qrr, REVERSE RECOVERY CHARGE
TJ=175C
3.5C 3.0C 2.5C 2.0C 1.5C 1.0C 0.5C 0.0C 700A/s
T J =175C
T J =25C
800A/s
900A/s 1000A/s
800A/s
900A/s
1000A/s
diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=400V, IF=50A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR = 400V, IF = 50A, Dynamic test circuit in Figure E)
Power Semiconductors
9
Rev. 2.1 Dec-04
TrenchStop Series
IKW50N60T q
40A
REVERSE RECOVERY CURRENT
T J =175C
-750A/s
dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT
T J=25C
30A T J =25C 20A
-600A/s
-450A/s
T J=175C
-300A/s
10A
Irr,
-150A/s
0A
700A/s
800A/s
900A/s
1000A/s
0A/s 700A/s
800A/s
900A/s
1000A/s
diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR = 400V, IF = 50A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, IF=50A, Dynamic test circuit in Figure E)
120A 100A 80A 60A 40A 20A 0A
2.0V
T J =25C 175C
I F =100A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
1.5V
50A
1.0V
25A
0.5V
0V
1V
2V
0.0V 0C
50C
100C
150C
VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature
Power Semiconductors
10
Rev. 2.1 Dec-04
TrenchStop Series
IKW50N60T q
dimensions [mm] min max 5.28 2.51 2.29 1.32 2.06 3.18 21.16 16.15 5.72 20.68 4.930 6.22 min 0.1882 0.0902 0.0701 0.0429 0.0681 0.1051 0.8189 0.6161 0.2051 0.7799 0.1402 0.2409 4.78 2.29 1.78 1.09 1.73 2.67 20.80 15.65 5.21 19.81 3.560 3.61 6.12 [inch] max 0.2079 0.0988 0.0902 0.0520 0.0811 0.1252 0.8331 0.6358 0.2252 0.8142 0.1941 0.2449
TO-247AC
symbol A B C D E F G H K L M N P Q
0.76 max
0.0299 max
0.1421
Power Semiconductors
11
Rev. 2.1 Dec-04
TrenchStop Series
i,v diF /dt
IKW50N60T q
tr r =tS +tF Qr r =QS +QF tr r
IF
tS QS
tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Power Semiconductors
12
Rev. 2.1 Dec-04
TrenchStop Series
IKW50N60T q
Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2004 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
13
Rev. 2.1 Dec-04

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